Projektnummer

0050676

Zusammenfassung

The integration of ferroelectric oxides into future nanoelectronic devices using the semiconductor technology raises a range of fundamen- tal questions which are related to scaling effects in these materials. The team investigates how scaling effects such as the superparaelec- tric limit, tunneling processes, the imprint, the fatigue, and the ferroelectric retention depend on the neighboring phases. The role of the interface chemistry and the stress/strain conditions, resulting from the interaction between the ferroelectric grain and the surround- ing materials, is examined with select...